EECS faculty member and principal investigator in the Microsystems Technology Laboratories, MTL, Judy Hoyt has been selected for the 2011 IEEE Andrew S. Grove Award. Judy is co-recipient of this award with MIT Department of Materials Science professor Eugene Fitzgerald.
Hoyt and Fitzgerald are cited for “seminal contributions to the demonstration of Si/Ge lattice mismatch strain engineering for enhanced carrier transport properties in MOSFET devices.”
Judy Hoyt pioneered the development of strained Si MOSFET technology in the 1990s. Her present research interests are in the areas of novel silicon-based heterostructure and nanostructure devices, new processes and materials for advanced device applications, Si heteroepitaxy, and CMOS front-end process integration. Currently Hoyt and her group are working to build nanowires from a silicon-germanium composite, where intervening layers of pure silicon cause compression rather than tension. Read about this work in the MIT News Office January 6, 2010 article "Straining forward - Nanowires made of ‘strained silicon’ — silicon whose atoms have been pried slightly apart — show how to keep increases in computer power coming."
The IEEE Andrew S. Grove Award is an award is presented for outstanding contributions to solid-state devices and technology. The award may be presented to an individual or a team up to three. It was established by the IEEE Board of Directors in 1999 and named in honor of Andrew Grove. EECS faculty member Dimitri Antoniadis was recipient of the 2002 IEEE Andrew S. Grove Award.