Antoniadis receives IEEE Jun-Ichi Nishizawa Medal

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September 16, 2015

Dimitri Antoniadis
Dimitri Antoniadis, the Ray and Maria Stata Professor of Electrical Engineering, has received the 2015 IEEE Jun-Ichi Nishizawa Medal, an award honoring outstanding contributions to material and device science and technology.

The IEEE published the following citation describing Antoniadis’ achievements.

“Known for his deep understanding of device physics, Dimitri Antoniadis has made pioneering contributions to the direction of the integrated circuit (IC) microelectronics industry by advancing the capabilities of metal oxide semiconductor field-effect transistors (MOSFETS). MOSFETs are used for amplifying and switching signals, and today’s microprocessors and memory devices contain billions of them. In 1978 while at Stanford University, Dr. Antoniadis developed the SUPREM process simulator, which was the first computer-aided design tool for silicon semiconductor devices and ICs. SUPREM became the preeminent simulator used by practically all IC manufacturers. His work on deep submicron MOS devices during the 1980s was one of the first demonstrations of nano-scale MOSFETs, and his innovations have continued to the foundation of today’s high-performance silicon FETs. At MIT, Dr. Antoniadis’ groundbreaking research in 1985 proved the feasibility of sub-100-nm MOSFETs and provided the first demonstration of source-to-channel electron injection velocities exceeding saturation velocity. Known as “velocity overshoot,” this provides an increase in current drive in short-channel MOSFETs, enabling higher performance previously not thought attainable. His development of the virtual-source model to describe the behavior of very short channel devices has shown the role of high carrier velocity and mobility in obtaining maximum device performance. With the ability to accurately simulate the characteristics of MOSFETs down to 22 nm and beyond, the model has been adopted by the International Technology Roadmap for Semiconductors (ITRS) for predicting the future of MOSFET scaling. As director for twelve years of the Materials, Structures, and Devices Center, Dr. Antoniadis has helped determine the most promising path for future microelectronics by pursuing scaling of MOS to its ultimate limit and interdisciplinary exploration of new-frontier devices."

"An IEEE Life Fellow and member of the US National Academy of Engineering, Dr. Antoniadis is currently a professor and the Ray and Maria Stata Chair in Electrical Engineering at the Massachusetts Institute of Technology, Cambridge, MA, USA."

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Read this citation on the IEEE’s website

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