Seminar is being held in Grier 34-401, please come by at 11:30am for a light lunch before the seminar begins.
In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance falls short. GaN, a III-V semiconductor, is proven to be the material of choice for high-frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. This talk discusses the application of GaN micromechanical devices in timing and integrated sensing.
Mina Rais-Zadeh received the Ph.D. degree in ECE from Georgia Institute of Technology in 2008. Since January 2009, she has been with the University of Michigan, where she is currently an Associate Professor in the EE Department. Her research interests include RF MEMS, gallium nitride MEMS, and micro/nano fabrication process development.