Spin based electronic device and circuit are proposed as one possible alternative to current CMOS technology because of the potential to achieve lower power consumption. However, currently, the energy efficiency in spin or magnetic related devices remains to be poor compared with their CMOS counterparts, mainly because the generation and the utilization of spins in those devices are usually accompanied with large, dissipative charge currents.
In this talk, I will show that by utilizing spin orbit interaction in solid state materials through the spin Hall effect or its quantum version – topological insulators, one can achieve efficient spin current generation and magnetic moment switching. Since the operations of those spin orbit electronics (or, Spin Orbitronics) are realized with pure spin currents rather than charge currents, much lower power consumptions compared with conventional devices can be realized. The applications of those spin obitronic devices both as memory components and microwave oscillators will be demonstrated. Moreover, I will also talk about the possibility of realizing near-dissipationless magnetic switchings using the strong spin orbit interactions inside topological insulators, which can potentially help to solve the heating and scaling issues associated with the CMOS technology.
Luqiao Liu received his BS in physics from Peking University, China in 2006 and his PhD in applied physics from Cornell University, Ithaca in 2012. Since then he has been working as a research staff member in the physical science department of IBM Watson Research Center (Yorktown Heights, NY). Dr. Liu’s recent work has been focusing on studying the properties of various magnetic/spin-related materials and applying them in magnetic memory and spin based logics. Dr. Liu is the author of fifteen peer-reviewed papers and the inventor of five granted/pending patents.