Are SiC Power Devices Ready for Prime Time?

Wednesday, March 5, 2014 - 12:00pm

Silicon Carbide (SiC) power devices can operate at higher temperatures, higher voltages and higher switching frequencies compared to existing silicon devices, resulting in greater power converter efficiency, smaller size and improved bandwidth. The SiC program at GE, which started out eight years ago, has now reached a manufacturing scale-up. This talk will describe the SiC MOSFET technology that has been optimized for aerospace applications. The next challenge is to expand the use of SiC in high power industrial applications, where the emphasis on reliability and cost is significantly higher.
Dr. Ljubisa Stevanovic received Dipl. Eng. degree from Belgrade University, Serbia, in 1988, and Ph.D. in Power Electronics from Caltech in 1995. He has been with GE Global Research Center since 1993, where he is presently a Chief Engineer for Energy Conversion. He is responsible for GE’s development of Silicon Carbide (SiC) power devices, advanced packaging and power conversion for a wide range of applications, including aerospace and renewables. Ljubisa holds 29 U.S. patents and has co-authored 40 publications.