I - Applied Physics and Devices

  • Researchers in the lab of Anantha Chandrakasan, the Joseph F. and Nancy P. Keithley Professor of Electrical Engineering, including Rahul Rithe, a graduate student in MIT’s Department of Electrical Engineering and Computer Science, have developed a chip which can perform professional quality enhancements of photographs quickly and without draining power on smartphone and digital cameras--cutting out the need for added energy- and time-consuming computational photography systems.
  • Researchers at the High Throughput Neurotechnology Group in the Research Laboratory of Electronics (RLE) have built an automated system that can rapidly produce 3-D, micron-resolution images of thousands of zebrafish larvae and precisely analyze their physical traits. The system, described in the Feb. 12 edition of Nature Communications, offers a comprehensive view of how potential drugs affect vertebrates, says Professor Mehmet Fatih Yanik, senior author of the paper.
  • Trying to build a new circuit that would use an emerging technology called compressed sensing has taken on a renewed focus under the work of members of the Electrical Engineering and Computer Science Department at MIT including EECS graduate student Omid Abari. With researchers in the Research Laboratory of Electronics at MIT (RLE) and in the Computer Science and Artificial Intelligence Lab (CSAIL) Obari is seeking to balance theory with chip building realities using new evaluation algorithms to allow creation of the ideal circuit.
  • Electrical Engineering and Computer Science Department Head Anantha Chandrakasan announced on Jan. 21, 2013, the appointment of Professor Vladimir Bulovic to the Fariborz Maseeh Professorship in Emerging Technology. Vladimir is a widely recognized leader in the areas of energy and nanotechnology. The Fariborz Maseeh chair was previously held by President Rafael Reif.
  • Imagine a 4,096-emitter array that is etched on a single chip, that can steer beams of light in, for example, human blood vessels. Michael Watts, associate professor of electrical engineering and principal investigator in the Research Laboratory of Electronics (RLE), Jie Sun, a graduate student in Watts’ lab and first author on the paper, Sun’s fellow graduate students Erman Timurdogan and Ami Yaacobi, and Ehsan Shah Hosseini, an RLE postdoc have reported on two new chips in the Jan. 10, 2013 online journal Nature.
  • Jesús del Alamo, the Donner Professor, MacVicar Faculty Fellow and Professor of Electrical Engineering in the Department of Electrical Engineering and Computer Science at MIT is the recipient of the 2012 Electron Devices Society (EDS) Education Award. On receiving this award at the IEEE International Electron Devices Meeting in San Francisco on Dec. 10, 2012, Prof. del Alamo was cited by the EDS “for pioneering contributions to the development of online laboratories for microelectronics education on a worldwide scale.”
  • Judy Hoyt, professor of electrical engineering and computer science in the MIT EECS Department, has teamed with colleagues in the Microsystems Technology Laboratories (MTL) to design a new kind of p-type transistor using germanium (not silicon). The team has successfully demonstrated that the p-type transistor can achieve speeds twice as fast as current experimental p-type transistors and nearly four times as fast as the best commercially produced p-type transistors.
  • EECS researchers including professors Vladimir Bulovic, Jing Kong and Mildred Dresselhaus and postdoctoral associate Hyesung Park and graduate student Joel Jean have joined MIT colleagues including associate professor of materials science and engineering Silvija Gradecak and postdoctoral associate Sehoon Chang, to produce a new kind of flexible and solar cell based on graphene paired with nanowires and quantum dots. This work could rival the current use of silicon crystals or indium tin oxide (ITO) and is predicted to be scalable for alternative use to the silicon or ITO models.
  • A team from the MIT Microsystems Technology Laboratories (MTL) including Jesús del Alamo, the Donner Professor of Science in MIT’s Department of Electrical Engineering and Computer Science (EECS), EECS graduate student Jianqian Lin, and Dimitri Antoniadis, the Ray and Maria Stata Professor of Electrical Engineering have used indium gallium arsenide to build nanometer-sized metal-oxide semiconductor field-effect transistors (MOSFETs) that can outpace silicon providing the smallest non-silicon transistors yet.


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