Silicon: The Most Perfectly Engineered Material


Event Image: 

Event Speaker: 

Dr. Takeo Abe

Event Location: 

MIT Room 6-120

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See details about this event here.

Event Date/Time: 

Thursday, July 24, 2014 - 4:00pm
Silicon: The Most Perfectly Engineered Material
Dr. Takao Abe
Shin-Etsu Handotai

Lecture by recipient of 2014 Harry C. Gatos Prize. 

The foundation for silicon single crystal growth was established in the US at Bell Laboratories in the 1950s with the determination of the physical properties of silicon materials and the development of the growth and evaluation methods. Siemens in Germany established the manufacturing method for the polycrystalline silicon starting material. Based on these early technologies, the mass production of single crystal silicon started in USA, Europe, and Japan, and has been in highest volume production in Japan since the 1980s. At the dawn of the single crystal production age, the senses, skills, and experience at the operator level were the major sources of knowledge, because textbooks about silicon melt growth did not exist. Today, however, the mass production and extremely high quality of silicon materials are due to nothing more than the natural properties of the silicon crystal itself.
I will present case studies of three major technologies: i) Dash’s necking method for dislocation-free crystal growth, ii) the new dislocation-free seeding (DFS) method for large diameter, heavy silicon boules, that I first reported, and iii) magnetic field applied CZ (MCZ) for stabilizing melt turbulence, first achieved by Hoshi at SONY. These breakthroughs have equally contributed to realizing over 300 mm diameter silicon crystals as the most perfectly engineered material.

A workshop on the Age of Silicon will be held July 25, from 10:00 to 5:30, in the Chipman Room, 6-104.
The Gatos Lecture and Prize were established in 1991 with a gift from Sumitomo Corporation. The Lecture and Prize recognize significant contributions to the advancement of the field of Materials Science and Engineering, particularly in electronic materials processing, behavior, and application.
Please join us!
4th Gatos Lecture - July 24, 2014