Massachusetts
Institute of Technology
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Area V (and IV) Chair:
Professor Leslie A. Kolodziejski
Content
Faculty and Staff Research Interests
Area IV and V Fall Open House
SAVE-THE-DATE: Thursday, Sept. 21, 2007
When: 2-4 pm
Where: Starr Room, 32-D463
Course 6 Electrical Engineering and Computer Science Graduate Area IV and V Fall Open House: Fall 2007 Schedule of Events
2:00 pm Social mingling and treat selection 2:10 pm Welcome from Area IV/V Chairperson, Prof. Leslie Kolodziejski Faculty/Research Staff Presentations 2:15 pm Dr. Franco Wong, "Photonic Quantum Entanglement and Applications" 2:25 pm Prof. James Kirtley, "Research in Electromechanics" 2:35 pm Prof. Clifton Fonstad, "Blue and Yellow LED Integration on Si CMOS Micro-Probes for Deep Brain Stimulation and Monitoring" 2:45 pm Dr. Gale Petrich, "Integrated Photonic Devices and Materials" 2:55 pm Prof. Fatih Yanik, "Biophotonics, Bioscreening and Micromanipulation Group" 3:10 pm Prof. Marc Baldo, "Soft Semiconductors" 3:20 pm Prof. Karl Berggren, "Quantum Nanostructures and Nanofabrication" 3:30 pm Prof. Cardinal Warde, "Compact Opto-Electronic Integrated Neural (COIN) Co-Processor" 3:40 pm Prof. Qing Hu, "Terahertz and Infrared Quantum-Cascade Lasers and Imaging" Faculty/Research Staff Contact Information:
(in order of appearance)Prof. Leslie Kolodziejski, leskolo@mit.edu , Bldg. 36-287, Tel: 617 253-6868
Dr. Franco Wong, franco@ncw2.mit.edu, Bldg. 36-473, Tel: 617 253-8131
Prof. James Kirtley, kirtley@mit.edu, Bldg. 10-098, Tel: 617 253-2357Prof. Clifton Fonstad, fonstad@mit.edu, Room 13-3050, Tel: 617 253-4634
Dr. Gale Petrich, gpetrich@mit.edu , Bldg. 36-293, Tel: 617-253-5020
Prof. Fatih Yanik, yanik@mit.edu, Bldg. 36-834, Tel: 617 253-1583
Prof. Marc Baldo, baldo@mit.edu, Bldg. 13-3053, Tel: 617 252-5132
Prof. Karl Berggren, berggren@mit.edu, Bldg. 36-219, Tel: 617-254-0272
Prof. Cardinal Warde, warde@mtl.mit.edu, Bldg. 13-3102, Tel: 617 253-6858Prof. Qing Hu, qhu@mit.edu, Room 36-465, Tel: 617 253-1573
Area V can be described in the following way. Take the fields of semiconductor electronics, quantum electronics, solid state physics; add circuit theory, electromagnetism, some knowledge of signals and systems plus computer science; then, season the mixture with some applied physics and a bit of solid state chemistry and mechanical engineering. The totality includes the range of activity that goes on in the Materials and Devices Area. The title itself has the not unimportant virtue of putting the significant boundary markers on the Area: at one end, Materials and at the other, Devices. The territory in between is multidisciplinary, a fact reflected in the make-up of the faculty which is a mix of those who hold doctorates in electrical engineering and those with doctorates in physics and materials science. In addition, several faculty members hold appointments jointly with other departments.
Although the Department, at the graduate level, is organized into six Areas, these groupings represent centers-of-gravity of research interest and are by no means parochial enclaves. Faculty members and students will often have interests that extend outside their primary Area. This breadth of interest can be seen by examining the Department's pamphlet describing "Research Interests of Faculty Members," where it will be noted that faculty in Area V also have interests in such topics as electromagnetics, electronic systems, communication, control, computers, biomedical engineering. The factor common to all faculty in our Area is the recognition of the role of electronic and optical materials as a vehicle for developing new devices at the frontiers of technology. Moreover, there is the awareness that many opportunities for creating novel devices would be foreclosed if we were to limit ourselves to "off-the-shelf" materials. The result is that we have put together a range of facilities for materials synthesis, device processing, fabrication, and testing, that for quality and scope can be matched by few universities.
The research in Area V is carried out in a number of locations. One of these is the Microsystems Technology Laboratories (MTL) located primarily in Bldg. 39, where research is concerned with the fabrication and study of micron-, submicron-, and nanometer-size structures and their use for the implementation of integrated electrical, optical and mechanical systems. Faculty and students from Area V are also located in the Center for Materials Science and Engineering (CMSE), which occupies Bldg. 13. Area V activities in Bldg. 13 encompass semiconductors, superconductors, organic semiconductors, and optical, microwave and quantum electronics. Within the Research Laboratory of Electronics, numerous laboratories supervised by the faculty support research activities in Area V.
Within the overall collaborative environment provided by the central laboratories there is autonomy at the level of local research groups, which contain one or more faculty members plus students and technical staff. Although a particular group will tend to concentrate on research projects related to its own special interests, there invariably occurs a continuous informal interaction among the groups and, as the need arises, inter-group programs are set up. The Area is also involved in cooperative programs with other Areas in the Department and with other Departments. At present, there are joint programs with all other areas of the Department, and with faculty in the Departments of Physics, Materials Science and Engineering, Chemical Engineering, Mechanical Engineering, Aeronautical Engineering, the Center for Materials Science and Engineering and the Media Lab.
Graduate Students who join the Area as Research Assistants are usually provided with office space. Faculty in the Area will ordinarily be able to provide office space to other graduate students engaged either in thesis research or in research under "6.961, Research in EECS" registration.
Faculty, staff and students participate in a variety of seminars that meet regularly to hear reports on current research being conducted internally and elsewhere. In addition, students in the area participate in running a weekly seminar where they interchange ideas and hear about each others research activities.
The research facilities of each group are ordinarily available, on an arranged basis, to all students of MIT and, in addition, there exist a large number of central facilities and services that graduate students can draw upon. Facilities available in CMSE include: instrumentation for IR, optical and UV spectroscopy; x-ray analysis; equipment for measurement of transport properties in solids; and magnetic field facilities.
Also available are a number of technician-operated facilities accessible on an arranged basis. These include: several scanning electron microscopes, a scanning Auger microscope, an electron microprobe, an ion beam microprobe, Rutherford backscattering, and facilities for chemical and spectroscopic analysis.
MIT is engaged in a comprehensive program of research into various aspects of microelectronics that encompasses fabrication, design, and architecture. The research in Area V relevant to microelectronics includes work on: semiconductor materials and material processing; the development of the technology for producing structures of nanometer dimensions; the development of novel devices and device structures, and microelectricalmechanical (MEMS) devices.
The physical resources to support Microsystems Research are contained in the Microsystems Technology Laboratories (MTL), which occupies Bldg. 39 and parts of Bldg. 38. This complex provides office space for approximately 60 graduate students, CAD, testing and masking facilities, and contains the following major laboratories: (For a more complete description see the MTL Web page.)
Integrated Circuits Research Laboratories (ICL) -- This is a complete state-of-the-art integrated circuits and fabrication laboratory, containing 2800 sq. ft. of class 10 space, and equipped with a full complement of facilities for the fabrication of microelectronic circuits with features at or below the 1 µm level. The ICL, as well as the Technology Research Laboratory, is staffed and operated by professional personnel, and qualified students can make arrangements for direct access.
Technology Research Laboratory (TRL) --This laboratory provides nearly 4000 sq. ft. of space, with 2,200 sq. ft being class 100 space, where graduate students and staff carries out novel process development. A wide variety of common-use and research -group specific equipment is housed in the TRL.
NanoStructures Laboratory -- Research in this laboratory is directed toward developing the advanced process techniques needed for fabricating surface structures with feature sizes ranging from nanometers to micrometers. Facilities are available for photo-, interferometric, electron-beam, and x-ray lithography. In addition, the NSL houses materials and processing facilities for etching (chemical, plasma and reactive-ion), lift-off, electroplating, sputter deposition and e-beam evaporation.
Nanoprecision Deposition Laboratory -- Within the Research Laboratory of Electronics, the Nanoprecision Deposition Laboratory is a state-of-the-art facility established for the layer-by-layer deposition of materials, especially compound semiconductors and dielectrics. Two deposition techniques are available including molecular beam epitaxy, for III-V compound semiconductors containing arsenic, phosphorus, and antimony, and ion beam deposition for dielectrics of silicon dioxide or tantalum pentoxide. In the photo, the molecular beam epitaxy system has two ultrahigh vacuum reactors that are interconnected to a central cluster tool for wafer loading and processing. The molecular beam epitaxy system is capable of handling more than one substrate or wafer and is also available to deposit onto wafers having up to 8 inch diameters.
Scanning-Electron-Beam Lithography Facility (SEBL) -- the scanning-electron-beam lithography facility enables the writing of patterns of arbitrary geometries with minimum features as fine as 17 nm. The facility includes two SEBL systems, a VS26 and a Raith 150. The former was developed at IBM Research Center specifically for electron-beam lithography and operates at 50 keV. The Raith ISO is an SEM modified for electron-beam lithography and has a maximum operating voltage of 30 keV.
Students entering Area V should have an undergraduate preparation that includes an undergraduate-level subject in solid-state electronics and physics. MIT students will have gained such experience in 6.012, "Electronic Devices and Circuits," followed by 6.720, "Integrated Microelectronic Devices." Students from other schools might find that the modeling concepts were conveyed in subjects on transistor physics or physical electronics.
In addition, students may have had a class in modern physics - equivalent to MIT subject 6.728, "Applied Quantum and Statistical Physics." A strong background in electromagnetism is also desirable as is some acquaintance with the concepts of statistical thermodynamics. The minimum background in electromagnetism should be that equivalent to 6.013, "Electromagnetics and Applications."
In mathematics, contact with one or more of the following subjects is desirable: Complex Variables, Analysis, Probability, and Linear Algebra. The respective MIT subjects are: 18.04, 18.100, 6.041 (or 18.313), and 18.06. Students lacking major elements in the above background are encouraged to take the appropriate undergraduate subjects as part of their overall plan for graduate school.
The graduate program in Electrical Engineering contains no required subjects. Programs are tailored to individual needs and professional objectives, in consultation with the student's graduate counselor and research advisors. However, each Area has recognized the need for certain "recommended" subjects that fulfill the needs of a major percentage of its students. In Area V, we strongly recommend as "core curriculum" subjects 6.720, "Integrated Microelectronic Devices," and 6.728, "Applied Quantum and Statistical Physics."
Each of the several more specialized fields within the Area has its own "recommended" subjects. Students interested in general solid-state devices should take 6.730, "Physics for Solid-State Applications.” Those who have had no previous experience with "hands-on" IC processing techniques are urged to take 6.152J, "Micro/Nano Processing Technology." Students specializing in optical electronics are encouraged to consider 6.630, Electromagnetics," 6.631, "Optics and Photonics," and 6.632, "Electromagnetic Wave Theory." Each semester there are a number of special subjects. For example, this spring there is a class on "fundamentals of Photonics, " 6.621, taught by Professor Kaertner.
The guidelines for the Master of Engineering and Master of Science programs include the completion of four graduate level H classes and a master's research thesis, which must be completed within two years. All students are expected to have completed a master's degree before being admitted to the doctoral program.
There are two qualification examinations for the doctoral program: The Technical Qualifying Examination (TQE) and the Research Qualifying Examination (RQE). In the TQE, the student must demonstrate competence in four topic areas: Two core undergraduate areas by a written examination at the end of the first year and two advanced topic areas by earning an A in two subjects from the list of advanced graduate level classes. Incoming students should meet with their academic graduate counselor to select the classes that would best prepare them for the TQE. Students not showing competence in all four topic areas by the above method may take an oral qualifying examination. The format for the RQE is a written and oral report on your research to a faculty committee.
In addition to the qualification examinations, students must complete a minor, be a teaching assistant for one term, and take up to two additional classes suggested by their thesis committee. Details of the doctoral program can be found in Memo3800new in the EECS Graduate Office (also on the EECS Graduate program website).
Rights and Responsibilities in Research Seminar (RRR)
The Area V faculty and research staff conduct an interesting seminar on "Rights and Responsibilities in Research" which is recommended to all graduate students. During these evening “dinner seminars,” discussions center on a variety of situations that you may encounter in your professional career. The situations that will be discussed may include i) how to determine who is a coauthor on a paper or co-inventor on a patent, or ii) what should you do if you discover a mistake in work that is already published, or iii) what if you discover that a student colleague is violating an important safety rule in the lab, as a few examples. You will have an opportunity to discuss these issues with faculty and other students. The seminar meets three times during the Fall semester. There are three dinner meetings scheduled for the Fall 2007 semester. See: http://hackman.mit.edu
Letter from Prof. Tayo Akinwande on the Rights and Responsibilities in Research Seminars (pdf)
RRR Schedule, Fall Term, 2007 (to be updated):
| September 18 | How to Assign Fair Credit for Scientific Work* NOTE: It is important to (i) send your e-mail address to Ms. Carolyn Collins (collins@mtl.mit.edu) so we know how to contact you, and (ii) RSVP to Ms. Collins by 5:00 PM on Monday, September 17 so that we will have enough food for dinner. |
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| 6:00-8:00 pm, Haus Room 36-428 | ||
| October 16 | Scientific Responsibility: Dealing with Error and Misconduct | |
| 6:00-8:00 pm, Allen Room 36-428 | ||
| November 6 | The Advisor/Advisee Relationship | |
| 6:00-8:00 pm, Allen Room 36-428 |
The following is a list of undergraduate and graduate subjects relevant to Area V. Subjects which are available on MIT Open Course Ware (OCW) are linked below to the EECS section of OCW.
Undergraduate Subjects
| Applied Electromagnetics: From Motors to Lasers (Fall, Spring) | |
| Microelectronic Devices and Circuits (Fall, Spring) |
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| Micro/Nano Processing Technology (Fall, Spring) |
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Fundamentals of Photonics (Spring) |
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| Modern Optics Project Laboratory (Fall) |
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| Solid-State Circuits (Spring) |
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| Introduction to NanoElectronics (Spring) |
First Year and Introductory Graduate Subjects
| Analysis and Design of Digital Integrated Circuits (Fall) | |
| Electromagnetics (Fall) | |
| Optics and Optical Photonics (Fall) | |
| Electromagnetic Wave Theory (Spring) | |
6.634J |
Nonlinear Optics (Spring) |
| Optical Signals, Devices, and Systems (Fall) | |
| Electromagnetic Fields, Forces, and Motion (Spring) | |
| Electric Machines (Fall) | |
| NanoElectronics (Spring) (meets with 6.701) | |
| Integrated Microelectronic Devices (Spring) | |
| Applied Quantum and Statistical Physics (Fall) | |
| Physics for Solid-State Applications (Spring) | |
| Physics of Solids (Fall, alt. even years) | |
| Applied Superconductivity (Fall, alt. even years) | |
| Compound Semiconductor and Heterostructure Devices (Spring, alt. odd years) | |
| Physics of Microfabrication: Front End Processing (Fall) |
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| Design and Fabrication of Microelectromechanical Devices (Spring) | |
| Control of Manufacturing Processes (Spring) | |
| Submicrometer and Nanometer Technology (Spring) |
More Advanced Graduate Subjects
6.729 |
Molecular Electronics (Fall) |
6.731 |
Semiconductor Laser Physics and Design |
| Applied Superconductivity (Fall, alt. odd years) | |
6.776 |
High Speed Communication Circuits and Systems |
6.778J |
Materials and Processes for Microelectromechanical Devices and Systems (Spring) |
| Semiconductor Manufacturing (Spring, alt. even years) | |
6.789 |
Organic Optoelectronics (Spring, alt. even years) |
| Semiconductor Laser Physics and Design (Special Subject) |
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| Theory of Solids I (Fall) | |
| Theory of Solids II (Spring) |
A number
of research seminars of interest to students/researchers in Area V are offered
each week and are open to all. A list of seminar series/times/locations
is found below and includes:
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The following is a description,
in key words and phrases, of the current research in each of the major research
clusters in the Area. A more detailed description of recent research will
be found in the three publications: (1) "Research
in Materials, MIT Annual Report;" (2) "Annual Report of
the Microsystems Technologies Laboratories;" and (3) "Progress
Report of the Research Laboratory of Electronics."
Semiconductor Devices and Microelectronics
A. I. Akinwande, D. A. Antoniadis, J. A. del Alamo, D. S. Boning, C. G. Fonstad, J. L. Hoyt, Q. Hu, J. Lang, H-S. Lee, T. Palacios, L. R. Reif, M. A. Schmidt, C. G. Sodini, J. Voldman, J. Han
V. Bulovic, C. Fonstad, L.A. Kolodziejski, R. Ram, C. Warde, M. Baldo
M. S. Dresselhaus, Q. Hu, R. Ram, T. P. Orlando, M. Baldo, Jing Kong, K. Berggren
Nanoscale Technology (see nanoEECS)
Faculty/Staff Research Interests
Akinwande,
A. I. (akinwand@MTL.MIT.EDU,
Room 39-553A, x8-7974) Display devices, vacuum microelectronic devices, and
wide bandgap semiconductor devices.Antoniadis,
D. A. (antoniadis@MTL.MIT.EDU,
Room 39-415B, x3-4693)
Electronic devices for integrated circuits. Emphasis in high-performance Field-Effect Transistors (FETs) with extreme-submicrometer feature dimensions and incorporating novel channel materials. Baldo,
M. (baldo@MIT.EDU, Room 13-3053, x2-5132) Energy and
Charge Transport in Amorphous Organic Materials. Microscopic processes
in small-molecular materials. High efficiency phosphorescence and sensitized
fluorescence. Macroscopic process of charge transport and injection in amorphous
organic semiconductors. A new model will be proposed that includes disorder
at the metal/organic injection contact.Berggren,
K.K. (berggren@MIT.EDU, Room
36-219, x4-0272) Methods of nanostructure fabrication, applied to superconductive
quantum circuits, photodetectors, and superconductive electronics; quantum
computing; and evolvable hardware.Boning,
D.S. (boning@MTL.MIT.EDU, Room
39-567B, x3-0931) Semiconductor Manufacturing. Metrology and modeling of IC
process, device and interconnect variation. Process control for variation
reduction. Computer tools and systems for IC process and device design.Bulovic,
V. (bulovic@MIT.EDU, Room 13-3138,
x3-7012) Physical properties of organic thin films, structures, and devices
applied to the development of optoelectronic, electronic, and photonic organic
devices of nano-scale thickness, including visible LEDs, lasers, solar cells,
photodetectors, transistors, and flexible and transparent optoelectronics.Chandrakasan,
A.P. (anantha@MTL.MIT.EDU, Room
38-107, x8-7619) Energy efficient implementatioin of digital integrated circuits
for systems such as distributed wireless microsensors and portable multimedia
devices, the development of protocols and algorithms for wireless communication,
and design methodologies for emerging technology. Dawson, J. L. ( jldawson@mtl.mit.edu, Rm. 39-527A, phone: x4-5281) Analog system theory and its applications; RF transceivers, power amplifier linearization, high speed data conversion, problems in nolinear control.del
Alamo, J. A. (alamo@MIT.EDU, Room 39-567A,
x3-4764) Device physics and technology of transistors for high-frequency power
applications. Emphasis on III-V high electron mobility transistors and
Si MOSFETs on SOI.Dresselhaus, M. S. (millie@MGM.MIT.EDU,
Room 13-3005, x3-6864) Electronic materials engineering. Electronic, lattice,
structural properties. Semimetals, semiconductors, metals, intercalation compounds.
Fullerenes. Carbon nanotubes. Magnetic semiconductors.Fonstad,
C. G. (fonstad@MIT.EDU, Room 13-3050,
x3-4634) Compound semiconductor heterostructures, devices, and physics. Optoelectronic
devices and monolithic optoelectronic integration technologies and applications,
and optoelectronic VLSI. Microscale thermophotovoltaics. Molecular beam
epitaxy.Gray,
M.L. (mgray@MIT.EDU, Room E25-519,
x8-8974) Electrical, mechanical and chemical mediators of connective tissue
growth and development. Ion partitioning and transport in biological tissues.
Magnetic resonance spectroscopy and imaging. Development of micromachined
tools for biological applications.Han,
J. (jyhan@MIT.EDU, Room 38-841, x3-2290)
Application of micro/nanofabrication to biolomolecule manipulation. Micro/nanofluidics.
Biomolecules sorting / preconcentration / processing using nanofluidic filters.
Micro-Total-Analysis Systems, Stochastic motion of biomolecules in confined
space. Transport of molecules through nanospace. Hoyt,
J. (jlhoyt@MTL.MIT.EDU, Room 39-427A, x2-2873)
Novel processes, materials and device concepts for silicon technology.
Device physics of silicon-based heterostructures and nanostructures.
Epitaxial growth by chemical vapor deposition.Hu,
Q. (qhu@MIT.EDU, Room 36-365, x3-1573) Physics and application
of millimeter-wave, THz, and infrared devices, including THz and infrared
solid-state lasers and micromachined millimeter wave focal-plane sensor arrays.
Kolodziejski,
L. A. (leskolo@MIT.EDU, Room 36-287,
x3-6868) Compound semiconductor materials, novel heterostructures, devices
and device physics. Heteroepitaxial growth processes and advanced fabrication
technology. Optoelectronics and photonic devices. Photonic crystal technology.Kong,
J.A. (kong@cetaweb.mit.edu,
Room 26-305, x3-5625) Electromagnetic wave theory and applications.Kong, Jing (JingKong@mit.edu,
Room 13-3017, x3-6860)
Carbon nanotubes: synthesis and Electronic devices.Lang, J.H. (lang@MIT.EDU,
Room 10-176, x3-4687) Analysis, design and control of pysical systems. Applications
include traditional electric machines, microsensors, microactuators and flexible
structures. Digital control and manufacturing.Lee,
H-S. (hslee@MTL.MIT.EDU, Room 39-553A, x3-5174)
Research in analog integrated circuits in CMSO and BiCMOS technologies. Implementation
of early vision algorithms in CCD and resistive fuse circuits.Orlando,
T. P. (orlando@mit.edu, Room 13-3006
x3-5888) Quantum computation with superconductors. Superconducting devices
and materials. Nonlinear dynamics of Josephson Junction Arrays.Palacios, T. (tpalacios@mit.edu, Room 39-567B, x4-
2395)
Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices.
Petrich, G.S. ( gpetrich@MIT.EDU , Room 36-293, x3-5020) Compound semiconductor materials, novel heterostructures and devices, Heteroepitaxial growth processes with real time control. Optoelectronics and photonic devices. Photonic crystal technology.
Ram, R. (rajeev@MIT.EDU, Room 36-487, x8-4182) Novel semiconductor lasers for advanced fiber optic communications. Study of fundamental interactions between electronic materials and light. Reif, L. R. (reif@MTL.MIT.EDU, Room 38-401, x3-4601) Integrated circuit fabrication technology. New process technologies for VLSI. Three-dimensional integration. Environmentally-benign semiconductor manufacturing. Sawin, H.H. (hhsawin@MIT.EDU, Room 66-568, x3-4570) Characterization, use, and modeling of plasma etching processes used in microelectronics fabrication; plasma physics, plasma chemistry, gas-solid reactions and ion-induced surface processes.Schmidt, M. A. (schmidt@MTL.MIT.EDU, Room 39-521, x3-7817) Micromechanical systems (MEMS). Design of micromechanical sensors and actuators. Microfabrication technology. Smith, H. I. (hismith@NANO.MIT.EDU, Room 39-427A, x3-6865) Nanofabrication techniques and applications. Nanostructures. Nanolithography. Optoelectronic and deep-submicron devices. Optical communication. Microscopy. Atom-beam and x-ray optics.Sodini, C. G. (sodini@MIT.EDU, Room 39-527A, x3-4938) Technology intensive integrated circuit and systems design; application toward sensory interface electronics and wireless communication emphasizing analog signal processing and RF integrated circuits.Voldman, J. (voldman@MIT.EDU, Room 36-824, x3-2094) Biological applications of microtechnology, especially to cell biology; bioMEMS; electrostatics at the microscale.Warde, C. (warde@MTL.MIT.EDU, Room 13-3065, x3-6858) Materials devices and systems for optical information processing. Integrated circuit neuro-processors; optical neural network algorithms and architectures; integrated spectropolarimetric imaging sensors; spatial light modulators; microdisplays.Yanik, M. F. (fatih@stanford.edu, MIT Room 36-413, Staford extension: 650 814-7067) Nano-photonics, multi-photon imaging, single molecule imaging, nano-manipulation, femtosecond nano-surgery, bio-sensing, photonic crystals, micro-cavities, neuron degeneration and regeneration, C. elegans.
For information related to Nanoscale Technology, please visit nanoEECS
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