Qualification for Doctoral Study
Since Fall, 1999, the department has instituted a new doctoral qualification procedure. It consists of two parts, the TQE (technical qualification exam), and the RQE (research qualification exam). For details, please refer to the Department Graduate Office memoranda (3805 and 3806) on the doctoral qualification procedure.
Image, left: Fast data sensing in very high-density (45nm) SRAM. State-of-the-art high-density SRAMs require just 0.25μm2 to store a data bit, and the large memories that are possible as a result are one of the main enablers of the highly powerful microprocessors of today. This prototype, employs a sense-amplifier that specifically targets the dominant sources of variation to quickly read SRAM data. Results show a 34% improvement in speed of read-time. Courtesy N. Verma, Lab of Prof. Anantha Chandrakasan, Area III.
