Tuesday, March 7, 2000
4:00 PM (refreshments 3:30)
Edgerton Hall, Room 34-101
MTL VLSI Seminar
Abstract
Agilent’s Microwave Technology Center (MWTC) in Santa Rosa California develops and manufactures high performance semiconductor technologies for use in Agilent RF, microwave and mmWave instrumentation. To meet instrument needs for both excellent reliability and high performance, MWTC has developed a portfolio of III-V semiconductor technologies. Examples include a 2um, InGaP emitter HBT with ft =65 GHz, a 0.25 um PHEMT with ft = 65 GHz and a 0.12 um PHEMT with ft = 90 GHz. The HBT process has enabled the development of a 10 dB gain DC to 20 GHz Darlington amp and a DC to 16 GHz divider which have been utilized in numerous instrument applications and have resulted in improved dynamic range, bandwidth and time-domain jitter. The PHEMT processes have focused primarily on broadband, mmWave amplifiers such as a 20 to 40 GHz, 20 dB gain block and a 40 to 65 GHz amplifier that achieves 15dBm output power. The PHEMT technologies have enabled broadband instrumentation to be extended into the mmWave frequency range. Extensive reliability characterization of these technologies predicts MTTF values in excess of one million hours at maximum operating conditions. In this seminar an outline of the HBT and PHEMT process technologies will be presented including performance and reliability results. Several circuit examples will be presented and their contributions to instruments will be described.
|
Modified: Feb 7, 2000|
Current events|
Your comments
and inquiries are welcome.