Monday, February 7, 2000
4:00 PM (refreshments 3:30)
Edgerton Hall, Room 34-101
EECS Colloquium
Abstract
A brief overview will be given of the remarkable structural and electronic properties of bismuth nanowires with diameters less than 50 nm. Recently we have successfully fabricated 1D bismuth nanowire arrays in an alumina (Al203) template. These nanowires (having diameters in the range 10-110 nm, and ~ 10 mm in length) are single crystals, all having a common crystallographic orientation along the nanowire axis. As the nanowire diameter decreases, the lowest energy conduction subband rises and the highest energy valence subband falls, so that at a diameter dc (which for bismuth is at about 40 nm at 77 K), the semimetal-semiconductor transition occurs. Measurements of the transport properties of the nanowires show them to exhibit ballistic transport at 77 K. Because of incomplete filling of the template pores and because of imperfect contacts to each nanowire in a wire density of 1010 nanowires/cm2, transport measurements of single nanowires are necessary. Progress on single nanowire studies are presented along with results on the characterization, transport measurements, and modeling of 1D Bi quantum nanowires. Posssible device applications are also discussed.
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Modified: Jan 28, 2000|
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