Experimental results and theoretical analysis of quantum well opto-electroabsorption utilizing either the quantum-confined Stark effect or field induced carrier separation are discussed. These two techniques provide the framework for creating large absorption changes with little or no refractive index changes. Tradeoffs between band to band transitions in single quantum wells versus more complex coupled quantum well architectures are described.
These quantum well elements are then used in several types of experimental optical modulator structures to further enhance optical switching. Zero chirp reflection modulators (which use increasing absorption to either increase or decrease reflectivity), vertical cavity phase flip modulators (which encode information by changing reflected phase by 180 degrees, while keeping intensity constant), and vertical cavity X-modulators (which are reversible switches that route optical beams rather than absorbing in one of the switched states) will be explained. Explanations of combinations of devices for crossbar switches, beam routers and optical logic and imaging applications will also be made, and directions for future research will be discussed.
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Modified: Jun 25, 1997
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