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MIT Electrical Engineering and Computer Science
EECS Event |
Tuesday, November 6, 2001
4:00 PM (reception 3:30)
Edgerton Hall, Room 34-101
MTL VLSI Seminar
Abstract
Photomasks are the master images used to print the patterns that make up an Integrated Circuit. As lithography approaches the limits of resolution of even perfect lenses, images on the wafer have reduced contrast and pattern fidelity. To compensate for this Phase Shift Masks and Optical Proximity Correction are being implemented. This results in a huge increase in the complexity of the photomasks. This presentation will highlight some of the challenges in Photomask Fabrication at the 130nm generation and beyond, and will briefly discuss some of the further issues in "Next Generation Lithography" Technologies such as 157nm and EUV.