MIT Electrical Engineering and Computer Science EECS Event

Pulling the Rug from under- The Move to High-K

Vidya Kaushik
Motorola

Tuesday, May 8, 2001
4:00 PM (reception 3:30)
Edgerton Hall, Room 34-101
MTL VLSI Seminar

Abstract

The CMOS transistor is on the verge of a fundamental change in structure. Silicon dioxide may soon be phased out as a gate dielectric to be replaced by a high-K material. This transition will require a huge amount of understanding of the material and device properties of the new gate dielectric material in a short period of time. The coordination of materials engineering, device engineering, process integration and reliability engineering will be necessary to achieve this feat. Several materials have been studied so far and the results from these will be discussed using available material and device data. The challenges of deposition and process integration will be also discussed.