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MIT Electrical Engineering and Computer Science
EECS Event |
Tuesday, November 28, 2000
4:00 PM (refreshments 3:30)
Edgerton Hall, Room 34-101
MTL VLSI Seminar
Abstract
SiGe BiCMOS is an advanced analog and mixed signal technology for applications in wireless, wired, storage, and test applications. This talk will survey the current status of SiGe BiCMOS in IBM. The talk will begin by identifying some key technology attributes that differentiate the SiGe HBT from other competitors. The IBM SiGe technology roadmap will be discussed. The 0.25µm SiGe BiCMOS process will be described with cross sections and SEM micrographs. Some 0.5 and 0.25µm SiGe BiCMOS products, currently in manufacturing, will be shown with a focus on demonstrating the integration and performance capability of the technology. The 0.18µm technology with fT’s > 100 GHz will be shown followed by a discussion on scaling for SiGe HBT. This will be followed by a general discussion about interconnects and passives for state of the art SiGe BiCMOS technologies.